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Name : Dr. Baljit Kaur
Designation : Assistant Professor
Department : Department of Electronics & Communication Engineering
Qualification : M. Tech, PhD
Phone : +91 11-33861152 (O)
Email ID : baljitkaur@nitdelhi.ac.in

Position Held

Assistant Professor, ECE Department, NIT Delhi

Qualification-fdjk

M.Tech (NIT Kurukshetra), Ph.D (IIT Roorkee)

Awards & Honors

Research

•Digital VLSI Design

• Standard cell library characterization

•Delay Modeling

• Device Circuit Co-design Methodology

Administration

Position Held

Period: From

To

Place

Head, Computer Centre

20/9/2017

12 March, 2018

NIT Delhi

Chairman, Software Purchase Committee

20/9/2017

12 March, 2018

NIT Delhi

Chairman, IT Infrastructure Committee

20/9/2017

12 March, 2018

NIT Delhi

Deputy Controller of Examination

20/9/2017

30/09/2018

NIT Delhi

Chairperson, Medical Amenities

20/9/2017

15/07/2021

NIT Delhi

Co-ordinator, Cultural Activities

20/9/2017

12/07/2019

NIT Delhi

Chairperson, Literary Club

20/9/2017

12/07/2019

NIT Delhi

Convenor, EBSB Committee

5/10/2017

12/07/2019

NIT Delhi

Warden

22 March, 2018

30/09/2018

NIT Delhi

Nodal Officer, SC/ST Book Bank Cell

04/10/2021

Till Date

NIT Delhi

 

Publications

Journal Publications:

[1]

S. Sharma and B. Kaur, “Performance investigation of Asymmetric Double Gate Doping Less Tunnel FET with Si/Ge heterojunction,” IET Circuits, Devices Syst., vol. 14, no. 5, pp. 695-701,  2020, doi: 10.1049/iet-cds.2019.0290.

 

[2]

S. Sharma, R. Basu, and B. Kaur, “Interface trap charges associated reliability analysis of Si/Ge heterojunction doping less TFET” IET Circuits, Devices Syst., 2021, doi: 10.1049/cds2.12037.

 

[3]

S. Sharma, R. Basu, B. Kaur, “Insights into temperature influence on Analog/RF and linearity performance of a Si/Ge heterojunction Asymmetric Double gate doping less TFET,” Appl. Phys. A 127, 392 (2021). https://doi.org/10.1007/s00339-021-04541-6

 

[4]

Baljit Kaur, Arvind Sharma, Naushad Alam, S.K. Manhas, Bulusu Anand,”A variation aware timing model for a 2-input NAND gate and its use in sub-65nm CMOS standard cell characterization,” Microelectronics Journal, Volume 53, 2016, Pages 45-55, ISSN 0026-2692, https://doi.org/10.1016/j.mejo.2016.03.010.

 

[5]

B. Kaur, N. Alam, S. K. Manhas and B. Anand, "Efficient ECSM Characterization Considering Voltage, Temperature, and Mechanical Stress Variability," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 61, no. 12, pp. 3407-3415, Dec. 2014, doi: 10.1109/TCSI.2014.2336511.

 

[6]

Mishra, A.K.D., V.Pal, Y. and Kaur, B. (2021), "Design and mathematical analysis of a 7T SRAM cell with enhanced read SNM using PMOS as an access transistor", Circuit World, Vol. ahead-of-print No. ahead-of-print. https://doi.org/10.1108/CW-05-2020-0095.

[7]

Baljit Kaur, “Hardware reduction technique by using two-dimensional radon transform,” Int. Journal of Advanced Computer Engineering and Architecture (IJACEA), vol. 2, no. 2, pp. 223-230, Jun. Dec. 2012.

 

[8]

Baljit Kaur and Manoj Kumar Majumder, “A modified parallel pipeline projection engine architecture for two-dimensional radon transform computation,” International Journal of Computational Intelligence and Telecommunication Systems (serials publications), vol. 2, no. 2, pp. 69-78, 2011, ISSN: 2229-3078.

 

[9]

Baljit Kaur, “Synthesis of low power sequential circuits,” Int. Journal of Recent Trends in Engg., vol. 2, no. 5, Nov. 2009, ISSN: 1797-9617, available at: http://www.academypublisher.com/ijrte/vol02/no05/ijrte0205232233.pdf.

 

[10]

Baljit Kaur, “Performance comparison between LMS and NLMS algorithm,” Indian Journal of Applied Research, vol. 1, no. 6, pp. 63-65, Mar. 2011, ISSN: 2249-555X, online available at: http://ijar.in/march/20.pdf.

 

 

Conference Publications:

[1]

Alok Kumar Mishra, Shubham Sinha, Subbarao D.D.V, D. Vaithiyanathan and Baljit Kaur, “Study and Implementation of Low Power Decoder using DVL and TGL Logic”, Proc. IEEE Madras Section International Conference (MASCON 2021), Chennai, India, August 27 – 28, 2021.

[2]

Alok Kumar Mishra, Shubham Sinha, Subbarao D.D.V, D. Vaithiyanathan and Baljit Kaur, “Implementation and Investigation of Different SRAM Cells using DLTFET Device”, Proc. IEEE Madras Section International Conference (MASCON 2021), Chennai, India, August 27 – 28, 2021.

[3]

D. Vaithiyanathan, Alok Kumar Mishra, Twinkle Bhardwaj, Vipul Jee Verma, Baljit Kaur, “Power Consumption and Delay Comparison of a Modified TCFF with Existing FF Implemented using FinFET and Load Test Circuit Analysis”, Proc. IEEE Madras Section International Conference (MASCON 2021), Chennai, India, August 27 – 28, 2021.

[4]

S. Kumar, S. Sharma and B. Kaur, “Leakage Power Estimation for ISCAS C17 Benchmark Circuit,” 2019 6th International Conference on Computing for Sustainable Global Development (INDIACom), New Delhi, India, 2019, pp. 108-112.

 

[5]

S. Bharti, S. Sharma, A. Verma, M. Bharti, and B. Kaur, “Performance analysis of Pocket Doped Junction-Less TFET,” 2020 International Symposium on Devices, Circuits and Systems(ISDCS),Howrah, India, 2020, pp. 1-4, doi: 10.1109/ISDCS49393.2020.9263024.

 

[6]

A. Verma, S. Sharma, S. Bharti, M. Bharti, and B. Kaur, “Design of Tunnel Junction Engineered Dopingless TFET for Low power Applications,” 2020 International Symposium on Devices, Circuits and Systems (ISDCS), Howrah, India, 2020, pp. 1-6, doi: 10.1109/ISDCS49393.2020.9262986

 

[7]

S. Sharma, S. Kumar, A. K. Mishra, D. Vaithiyanathan and B. Kaur, “PVT Aware Analysis of ISCAS C17 Benchmark Circuit” In: Singari R.M., Mathiyazhagan K., Kumar H. (eds) Advances in Manufacturing and Industrial Engineering. Lecture Notes in Mechanical Engineering. Springer, Singapore, 2020. https://doi.org/10.1007/978-981-15-8542-5_107

 

[8]

S. Sharma, R. Basu, and B. Kaur, “Performance evaluation of a novel Si0.6Ge0.4/Ge dopingless TFET for enhanced low power analog/RF applications” in Proc. 3rd International Conference on VLSI, Communication and Signal processing (VCAS 2020), Motilal Nehru National Institute of Technology (MNNIT Allahabad), October 9-11, 2020, India.

 

[9]

H. Nath, S. Sharma, A. Verma, and B. Kaur “Comparative analysis of a Dopingless Tunnel FET and MOSFET based Current Mirror” in Proc. 3rd International Conference on VLSI, Communication and Signal processing (VCAS 2020), Motilal Nehru National Institute of Technology (MNNIT Allahabad), October 9-11, 2020, India.

 

[10]

H. Nath, S. Sharma, A. Verma, and B. Kaur “A Dopingless Tunnel FET and MOSFET based comparative study of a Simple Current Mirror” in Proc. 2020 1st International Conference on Energy, Materials Sciences and Mechanical Engineering (EMSME), National Institute of Technology Delhi, Delhi, India, October 30 - November 1, 2020.

 

[11]

S. Sharma, R. Basu, and B. Kaur, "DC and linearity performance of a novel Si0.6Ge0.4/Ge Dopingless Tunnel FET for ultra-low voltage applications," 2021 International Symposium on Devices, Circuits and Systems (ISDCS), 2021, pp. 1-5, doi: 10.1109/ISDCS52006.2021.9397899.

 

[12]

S. Sharma, R. Basu, and B. Kaur, "Performance Investigation of a Si/Ge Heterojunction Asymmetric Double Gate DLTFET Considering Temperature and ITC Variations," 2021 22nd International Symposium on Quality Electronic Design (ISQED), 2021, pp. 314-314, doi: 10.1109/ISQED51717.2021.9424354.

 

[13]

S. Sharma, R. Basu, and B. Kaur, “Temperature associated reliability analysis of a Si/Ge Heterojunction Dopingless Tunnel FET considering Interface Trap Charges," 2021 Devices for Integrated Circuit (DevIC), 2021, pp. 198-203, doi: 10.1109/DevIC50843.2021.9455866.

 

[14]

Raghav Chawla, Sarita Yadav, Arvind Sharma, Baljit Kaur, Rajendra Pratap, and Bulusu Anand,”TSV Induced Stress Model and Its Application in Delay Estimation” accepted for publication in Proc. IEEE  S3S conference, San Fransisco, California, USA, Oct. 15-18, 2018.

 

[15]

Yogesh Chaurasiya, Surabhi Bhargava, Arvind Sharma, Baljit Kaur, and Bulusu Anand, "Timing Model for Two Stage Buffer and Its Application in ECSM Characterization", in Proc. IEEE  19th International Symposium  on VLSI Design and Test (VDAT 2015), Ahmadabad, Gujrat, India,  pp. 1-6, Jun. 26-29, 2015, DOI: 10.1109/ISVDAT.2015.7208075.

 

[16]

Sandeep Miryala, Baljit Kaur, B. Anand, and S. K. Manhas, “Efficient Nanoscale VLSI Standard Cell Library Characterization Using a Novel Delay Model,” in Proc. IEEE 12th International Symposium on Quality Electronic Design 2011 (ISQED 2011), Santa Clara, CA, USA, pp. 458-463, Mar. 14-16, 2011, DOI: 10.1109/ISQED.2011.5770767

[17]

Baljit Kaur, Sandeep V., B. Anand, and S. K. Manhas, “An Accurate Current Source Model for CMOS Based Combinational Logic Cell,” in Proc. IEEE 13th International Symposium on Quality Electronic Design 2012 (ISQED 2012), Santa Clara, CA, USA, pp. 561-565, Mar. 19-21, 2012, DOI:  10.1109/ISQED.2012.6187549.

 

[18]

Surabhi Singh, Baljit Kaur, B. K. Kaushik, and S. Dasgupta, “Leakage Current Reduction Using Modified Gate Replacement Technique for CMOS VLSI Circuit,” International Conference on Communications, Devices and Intelligent Systems (CODIS2012), Jadavpur University, Kolkata, pp. 464-467, Dec. 28-29, 2012, DOI: 10.1109/CODIS.2012.6422239

 

[19]

Baljit Kaur, Sandeep Miryala, B. Anand, and S. K. Manhas, “An efficient method for ECSM characterization of CMOS inverter in nanometer range technologies,” 14h IEEE International Symposium on Quality Electronic Design 2013 (ISQED 2013), Santa Clara, CA, USA, pp. 458-463, Mar. 4-6, 2013.

 

[20]

Baljit Kaur and Manoj Kumar Majumder, “Novel VLSI architecture for two-dimensional radon transform computations,” in Proc. IEEE 1st International Conference on Recent Advances in Information Technology (RAIT 2012), Dhanbad, pp. 570-575, Mar. 15-17, 2012, DOI: 10.1109/RAIT.2012.6194591.

 

[21]

Baljit Kaur and Manoj Kumar Majumder, “Modified PPPE architecture for two-dimensional radon transform computation,” in Proc. IEEE International Conference on Image Information Processing (ICIIP 2011), Shimla, pp. 1-6, Nov. 3-5, 2011, DOI: 10.1109/ICIIP.2011.6108844.

 

 

Book Chapters:

[1]

S. Bharti, S. Sharma, A. Verma, M. Bharti, and B. Kaur, “Analog/RF and DC Performance Enhancement of a Pocket-Doped Junction-Less TFET for Low Power Application. In: Mallick P.K., Meher P., Majumder A., Das S.K. (eds) Electronic Systems and Intelligent Computing. Lecture Notes in Electrical Engineering, vol 686. Springer, Singapore, 2020. https://doi.org/10.1007/978-981-15-7031-5_28

 

[2]

A. Verma, S. Sharma, S. Bharti, M. Bharti, and B. Kaur, “Design and Investigation of Tunnel Junction Engineered Dopingless-TFET with Improved DC and RF/Analog Parameters Analysis. In: Mallick P.K., Meher P., Majumder A., Das S.K. (eds) Electronic Systems and Intelligent Computing. Lecture Notes in Electrical Engineering, vol 686. Springer, Singapore, 2020. https://doi.org/10.1007/978-981-15-7031-5_32

 

[3]

V. Kumar, S. Sharma, and B. Kaur, “A Novel Design of Fast and Low Power Pull-Up and Pull-Down Voltage Level Shifter. In: Mallick P.K., Meher P., Majumder A., Das S.K. (eds) Electronic Systems and Intelligent Computing. Lecture Notes in Electrical Engineering, vol 686. Springer, Singapore, 2020,  https://doi.org/10.1007/978-981-15-7031-5_35

 

[4]

Baljit Kaur, “VLSI architecture based on two-dimensional radon transform computation,” Advances in Engineering Research, Vol. 7, Nova Science Publishers, Inc., New York, USA, 2013.

 

Expert Talks

Expert Talk:

  • Dr. Baljit Kaur delivered an expert lecture in Five Days Online FDP on “Current Research Trends in Electronics & Communication Engineering” organized by the Department of ECE from 29th June to 3rd July 2020.
  • Dr. Baljit Kaur delivered an expert lecture in the one-week online faculty development program on “Recent Trends of Artificial Intelligence in Electronics Devices and Systems” organized by the Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida from 19th July to 24th July 2021.

 

FDP Organized:

 

  • Dr. Baljit Kaur organized a five-day national workshop on “HANDS-ON SESSION ON VLSI DESIGN TOOLS” from 18th to 22nd DECEMBER 2017.
  • Dr. Baljit Kaur organized five days FDP on "VLSI Chip Design Hands-on Using Open Source EDA” from 8 -12 July 2019 in collaboration with E&ICT Academy MNIT Jaipur.
  • Dr. Baljit Kaur organized five days FDP on "Python Programming with Industry perspective” from 2-6 December 2019 in collaboration with E&ICT Academy MNIT Jaipur.

 

Professional Activities

Selection Committee Member

Membership

  • IEEE Senior Member (Membership No. – 92065522)
  • Universal Association of Computer and Electronics Engineers (UACEE)